High Side Mosfet Driver Pulse Transformer

With gate drive transformer both hi lo side mosfets will get equal amplitude gate drive signals where as with bootstrapping technique used in chips the hi side gate pulse amplitude will be lesser than lo side gate pulse due to associated drop of bootstrap diode coming into picture in hi side.

High side mosfet driver pulse transformer.

The blue trace is the gate and shows the 1 duty cycle i was using at this point. High side driver supply bootstrap supply is requested. Its low buffer rds on can. The td300 is a three channel mosfet driver with pulse transformer driving capability.

A special section deals with the gate drive requirements of the mosfets in synchronous rectifier applications. The yellow trace shows the voltage drop when the mosfet turns on and then when it closes the voltage climbs again and oscillates. For more information see the overview for mosfet and igbt gate drivers product page. Circuit block diagram it can therefore directly drive a low side switch and through a pulse transformer an high side switch.

A pulse transformer is an isolation transformer which can operate at speeds often needed for half bridge gate driver applications up to 1 mhz. Matched propagation delay between high and low side drive prevents any unbalanced transformer usage. High side isolation 600 v is reached within the silicon. It has been optimized for both capacitive load drive and pulse transformer demagnetization.

Procedure for ground referenced and high side gate drive circuits ac coupled and transformer isolated solutions are described in great details. Noise immunity negative voltage robustness of the high side driver.